AP9930M
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance
www.DataSheet4U.com
P1S/P2S P1G...
AP9930M
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance
www.DataSheet4U.com
P1S/P2S P1G P2G N2D/P2D
2N AND 2P-CHANNEL ENHANCEMENT MODE POWER
MOSFET
N-CH BVDSS RDS(ON)
N2G N1S/N2S N1D/P1D
30V 33mΩ 6.3A -30V 55mΩ -5.1A
▼ Full Bridge Application on LCD Monitor Inverter
ID P-CH BVDSS RDS(ON) ID
P1S P1G P2S
SO-8
N1G
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
N1G
P2G
P1N1D
P2N2D
N2G N1S N2S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 30 ± 25 6.3 4.2 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 ±25 -5.1 -3.4 -20
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
200612032
AP9930M
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Volt...