AP9928EO
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive
www.DataSheet4U.com
D2 S2 G2...
AP9928EO
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive
www.DataSheet4U.com
D2 S2 G2 S2
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON)
S1 D1 G1 S1
20V 23mΩ 5A
▼ Optimal DC/DC battery application
TSSOP-8
ID
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 G1 G2 D2
S1
S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current , VGS @ 4.5V Drain Current , VGS @ 4.5V Pulsed Drain Current
1 3 3
Rating 20 ±12 5 3.5 25 1 0.008 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 125
Unit ℃/W
Data and specifications subject to change without notice
200206031
AP9928EO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown
Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.02 21 15.9 1.5 7.4 6.2 9 30 11 530 245 125
Max. Units 23 29 1 25 ±10 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown
Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
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VG...
