AP9926O

AP9926O Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low www.DataSheet4U.com drive current ▼ Surface mount package D2 S2 G2 S2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S1 D1 G1 S1 20V 28mΩ 4.6A TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 ±8 4.6 3.7 20 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 125 Unit ℃/W Data and specifications subject to change without notice 20071902 AP9926O Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 23 9.7 12.5 1 6.5 7 14.5 19 12 355 190 85 Max. Units 28 40 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) www.DataSheet4U.com Static Drain-Source On-Resista...