AP95T07GP
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fa...
AP95T07GP
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast www.DataSheet4U.com Switching Characteristic G S D
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
75V 5mΩ 80A
Description
Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low
voltage applications such as DC/DC converters. G
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1 3
Rating 75 ±20 80 70 320 300 2
4
Units V V A A A W W/℃ mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
450 -55 to 175 -55 to 175
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 0.5 62 Units ℃/W ℃/W
Data and specifications subject to change without notice
1
201120071
AP95T07GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown
Voltage
Test Conditions VGS=0V, ID=1mA
2
Min. 75 2 -
Typ. 0.01 57 85 25 36...