AP9467GS
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Single Drive Requirement ▼ Fast ...
AP9467GS
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Single Drive Requirement ▼ Fast Switching Characteristics G S
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET D
BVDSS RDS(ON) ID
40V 11mΩ 52A
Description
Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters. G D
S
TO-263(S)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 40 +20 52 33 200 44.6 0.36 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 2.8 40 62
Unit ℃/W ℃/W ℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1 200810072
AP9467GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source ...