AP9467AGH
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast...
AP9467AGH
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET D
BVDSS RDS(ON) ID
40V 11.5mΩ 43A
S
Description
Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
G
□
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 40 +20 43 27 180 39 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value 3.2 62.5
Units ℃/W ℃/W
Data & specifications subject to change without notice
1 200905133
AP9467AGH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown
Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.5V, ID=20A
Min. 40 1 -
Typ. 38 9.5 2 6.5 7 64 18 6 660 140 85 2.2
M...