AP9435GG
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ S...
AP9435GG
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ Single www.DataSheet4U.com Drive Requirement G S ▼ RoHS Compliant D
P-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
-30V 50mΩ - 4.2A
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D
S
SOT-89
D G
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1 3 3
Rating - 30 ±20 - 4.2 -3.4 -20 1.25 0.01 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 100
Unit ℃/W
Data and specifications subject to change without notice
201021051-1/4
AP9435GG
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown
Voltage
Test Conditions VGS=0V, ID=-250uA
2
Min. -30 -1 -
Typ. -0.1 6 10 2 6 10 7 26 14 520 180 130 16
Max. Units 50 90 -3 -1 -25 ±100 16 830 24 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown
Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)...