AP85L02H-A

Advanced Power Electronics Corp. AP85L02H/J-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching D G S Description AP88LS02 used advanced design and process to achieve low gate charge ,lower on-resistance and fast switching performance. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85L02J-A) is available for low-profile applications. Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range BVDSS RDS(ON) ID 25V 6mΩ 75A G D S TO-252(H) G D S Rating 25 ±20 75 64 350 96 0.75 -55 to 150 ...