AP640R6-00

24–31 GHz GaAs MMIC High Isolation SPDT Reflective PIN Switch AP640R6-00 Features Chip Outline 0.113 1.100 2.078 0.095 1.095 I Low Loss, < 1.2 dB I High Isolation, > 34 dB I Return Loss, < -12 dB I Fast Switching Speed, < 4 ns I High Power Handling, 37 dBm Peak, 33 dBm CW 0.988 0.398 0.000 0.000 2.095 2.190 Description Alpha’s high isolation, single pole, double throw PIN diode switch is a robust, high performance switch. It is ideal for low loss, high isolation applications, particularly where high power handling is required. The chip uses Alpha’s proven PIN diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. The GaAs MMIC employs two shunt PIN diodes in each arm and an on-chip bias network. Chips are measured on a 100% basis at 24, 28, and 30 GHz for insertion loss, isolation, input and output return losses, and also at DC for diode breakdown voltage and turn on voltage. Dimensions indicated in mm. All pads are ≥ 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature Storage Temperature DC Reverse Bias DC Forward Bias PIN Value -55°C to +125°C -65°C to +150°C -70 V (-20 mA) +1.3 V (100 mA) 10 W Electrical Specifications at 25°C Parameter Insertion Loss Isolation Input Return Loss Output Return Loss ...