AP640R1-00

18–40 GHz GaAs MMIC High Isolation SPST Reflective PIN Switch AP640R1-00 Features Chip Outline 0.877 0.670 0.585 0.313 0.000 0.000 0.070 1.150 1.225 Dimensions indicated in mm. All pads are ≥ 0.07 mm wide. Chip thickness = 0.1 mm. I Broad Bandwidth I Low Loss, < 1.3 dB I High Isolation, > 37 dB I Excellent Return Loss, < -13 dB I Fast Switching Speed, 4 ns I High Power Handling, 37 dBm Peak, 33 dBm CW Description Alpha’s high isolation, single pole, single throw PIN diode switch is a robust, high performance switch. It is ideal for low loss, high isolation applications, particularly where broad bandwidths and high power handling is required. The chip uses Alpha’s proven PIN diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. The GaAs MMIC employs two shunt PIN diodes and an on-chip bias network. Chips are measured on a 100% basis at 24, 28, 31 and 35 GHz for insertion loss, isolation, input and output return losses, and also at DC for diode breakdown voltage and turn on voltage. Absolute Maximum Ratings Characteristic Operating Temperature Storage Temperature DC Reverse Bias DC Forward Bias PIN Value -55°C to +125°C -65°C to +150°C -70 V (-20 mA) +1.3 V (100 mA) 10 W Electrical Specifications at 25°C Parameter Insertion Loss Isolation Input Return L...