Advanced Power Electronics Corp.
AP60T03GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Dr...
Advanced Power Electronics Corp.
AP60T03GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER
MOSFET
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G
D S
Description
AP60T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS RDS(ON) ID
30V 12mΩ 45A
GD S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
PD@TA=25℃ TSTG TJ
Drain-Source
Voltage Gate-Source
Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation
Linear Derating Factor Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
30 +20 45 32 120 44 0.3 2.4 -55 to 175 -55 to 175
V V A A A W W/℃ W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value 3.4 62.5
Data and specifications subject to change without notice
Units ℃/W ℃/W
1 201501298
AP60T0...