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AP4800AGM
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lo...
www.DataSheet4U.com
AP4800AGM
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance
D D D D
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON)
G S
30V 18mΩ 9.4A
▼ Fast Switching Characteristic ▼ RoHS Compliant
SO-8
S S
ID
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±25 9.4 7.5 40 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit ℃/W
Data and specifications subject to change without notice
200621051-1/4
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AP4800AGM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown
Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 30 1 -
Typ. 0.02 14 18 16 7 1 4.5 7 8 18 8 420 210 70 3.5
Max. Units 18 30 ...