AP4407GR
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fa...
AP4407GR
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.com Switching Characteristic G S D
P-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
-30V 14mΩ -50A
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S
TO-262(R)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -30 ±25 -50 -32 180 54 0.4 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.3 62 Units ℃/W ℃/W
Data and specifications subject to change without notice
200218051
AP4407GR
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown
Voltage
Test Conditions VGS=0V, ID=-250uA
2
Min. -30 -1 -
Typ. -0.01
Max. Units 14 23 -3 -1 -25 ±100 60 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown
Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
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Static Drai...