AP2612GY-HF

AP2612GY-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 1.8V Gate Drive ▼ Simple Drive Requirement ▼ Surface Mount Device ▼ RoHS Compliant D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET S BVDSS RDS(ON) G D 30V 35mΩ 6A ID SOT-26 D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is widely used for commercial-industrial surface mount applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 +8 6 4.7 20 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W 1 201103241 Data and specifications subject to change without notice AP2612GY-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=5A VGS=2.5V, ID=2.5A VGS=1.8V, ID=1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Curre...