DatasheetsPDF.com

AP2312GN Datasheet

Part Number AP2312GN
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP2312GN DatasheetAP2312GN Datasheet (PDF)

AP2312GN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 50mΩ 4.3A Description SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Abs.

  AP2312GN   AP2312GN






Part Number AP2312GN-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-channel Enhancement-mode Power MOSFET
Datasheet AP2312GN DatasheetAP2312GN-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP2312GN-HF-3 N-channel Enhancement-mode Power MOSFET Capable of 2.5V Gate Drive Low On-Resistance Surface Mount Device RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 20V 50mΩ 4.3A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2312GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial .

  AP2312GN   AP2312GN







N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2312GN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 50mΩ 4.3A Description SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Parameter Rating 20 ±12 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 4.3 3.4 10 1.38 0.01 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200920041 AP2312GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.02 16 5 1 2.3 8 9 11 2 360 75 60 1.5 Max. Units 36 50 75 1.2 1 10 ±100 8 580 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coeffici.


2007-05-03 : AA4002    AA4040PBC    AA8227    AH211    AH266    AH266    AH276    AH277A    AH278    AM4406   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)