AP2306N
Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package
S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 32mΩ 5.3A
Description
SOT-23
G
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-ef...
