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AP2306AGEN Datasheet

Part Number AP2306AGEN
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP2306AGEN DatasheetAP2306AGEN Datasheet (PDF)

AP2306AGEN RoHS-compliant Product Advanced Power Electronics Corp. ▼ Capable of 2.5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 50mΩ 4.1A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for commercial-industrial applications. D G S Absolute Maxim.

  AP2306AGEN   AP2306AGEN






Part Number AP2306AGEN-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP2306AGEN DatasheetAP2306AGEN-HF Datasheet (PDF)

AP2306AGEN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free SOT-23 D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S G 30V 50mΩ 4.1A ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The SOT-23 package is widely used for commercial-industrial app.

  AP2306AGEN   AP2306AGEN







N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2306AGEN RoHS-compliant Product Advanced Power Electronics Corp. ▼ Capable of 2.5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 50mΩ 4.1A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 +6 4.1 3.3 16 1.38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 200812031 AP2306AGEN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=4A VGS=2.5V, ID=3A VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=30V, VGS=0V VGS=+6V ID=3A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=5V RD=15Ω VGS=0V VDS=25V .


2014-10-01 : BP2833A    WM5102    AP15N03GH-HF    AP15N03GJ-HF    AP2612GY-HF    AP2306AGEN    AP2306AGEN-HF    AP9420GM-HF    AP3402GEH    AP3402GEJ   


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