AP2304GN
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small package outline ▼ ...
AP2304GN
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small package outline ▼ Surface mount package
S D
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
25V 117mΩ 2.7A
Description
SOT-23
G
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source
Voltage Gate-Source
Voltage
www.DataSheet4U.com
Parameter
Rating 25 ±20
Units V V A A A W W/ ℃ ℃ ℃
Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current
1,2 3
3
2.7 2.2 10 1.38 0.01 -55 to 150 -55 to 150
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200420043
AP2304GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown
Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 25 1 -
Typ. 0.1
Max. Units 117 190 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown
Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2.5A VGS=4.5V, ID=2A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off)...