AP02N90I

www.DataSheet4U.com AP02N90I Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D Advanced Power Electronics Corp. ¡¿ ¡¿ ¡¿ ¡¿ Simple Drive Requirement Isolation Full Package Fast Switching Characteristics RoHS compliant G S BVDSS RDS(ON) ID 900V 7.2£[ 1.9A Description The TO-220CFM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high current high speed switching circuits. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 900 ±30 1.9 1.2 6 34.7 0.28 2 Units V V A A A W W/¢J mJ A ¢J ¢J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 36 1.9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.6 62 Units ¢J /W ¢J /W Data & specifications subject to change without notice 200418062-1/4 AP02N90I www.DataSheet4U.com Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS £GB VDSS/£G Tj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 900 2 - Typ. 0.8 2 12 2.5 4.7 10 5 18 9 630 40 ...