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AP02N60I Datasheet

Part Number AP02N60I
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP02N60I DatasheetAP02N60I Datasheet (PDF)

www.DataSheet4U.com AP02N60I N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement G S D BVDSS RDS(ON) ID 600V 8Ω 2A Description The TO-220CFM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high current high speed switching circuits. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID.

  AP02N60I   AP02N60I






Part Number AP02N60T-H-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP02N60I DatasheetAP02N60T-H-HF Datasheet (PDF)

AP02N60T-H-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 9Ω 0.3A S S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for commercial-industrial a.

  AP02N60I   AP02N60I







Part Number AP02N60P-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP02N60I DatasheetAP02N60P-HF Datasheet (PDF)

AP02N60P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ Halogen Free & RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 8Ω 2A S Description The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC, DC-AC converters for telecom, industrial and consumer environment. G D S TO-220 Absolute Maximum Ratings S.

  AP02N60I   AP02N60I







Part Number AP02N60P-A-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP02N60I DatasheetAP02N60P-A-HF Datasheet (PDF)

AP02N60P-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G D S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID TO-220 650V 8Ω 2A Description The TO-220 package is widely preferred for all commercial-industrial applications. The device is suited for DC-DC, DC-AC converters for telecom, industrial and consumer environment. D G S Absolute Maximum Ratings Symb.

  AP02N60I   AP02N60I







Part Number AP02N60P
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP02N60I DatasheetAP02N60P Datasheet (PDF)

AP02N60P www.DataSheet4U.com Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G D S BVDSS RDS(ON) ID TO-220 600V 8Ω 2A Description The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,DC-AC converters for telecom, industrial and consumer environment. D G S Absolute Maximum Ratings Symbol.

  AP02N60I   AP02N60I







Part Number AP02N60J-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP02N60I DatasheetAP02N60J-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP02N60H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Speed RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 600V 8Ω 1.6A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S D (tab) TO-252 (H) The AP02N60H-HF-3 is in the TO-252 package which is widely preferred for commercial a.

  AP02N60I   AP02N60I







N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com AP02N60I N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement G S D BVDSS RDS(ON) ID 600V 8Ω 2A Description The TO-220CFM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high current high speed switching circuits. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 ± 30 2 1.26 3.6 22 0.176 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 80 2 2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 5.7 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200117032 AP02N60I www.DataSheet4U.com Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 600 2 - Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14 Max. Units 8 4 10 100 ±100 V V/℃ Ω V S uA.


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