AOT9600

www.datasheet4u.com AOT1N60 1.3A, 600V N-Channel MOSFET formerly engineering part number AOT9600 General Description The AOT1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Top View TO-220 Features VDS (V) = 700V @ 150°C ID = 1.3A RDS(ON) < 9Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! D G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current C Avalanche Current C C G Maximum 600 ±30 1.3 0.8 4 1.0 15 30 5 41.7 0.33 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ oC °C °C TC=25°C TC=100°C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 55 2 Repetitive avalanche energy Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-Sink A Maximum Junction-to-Case D,F A Maximum 65 0.5 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT1N60 Electrical...