AOT462

www.datasheet4u.com AOT462 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 60V ID = 70A RDS(ON) < 18mΩ (V GS = 10V) (VGS = 10V) General Description The AOT462 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOT462 is Pb-free (meets ROHS & Sony 259 specifications). TO-220 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B C Maximum 60 ±20 70 70 120 26 101 100 50 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case B A Steady-State Steady-State Symbol RθJA RθJC Typ 45 1.25 Max 60 1.5 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT462 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol www.datasheet4u.com Parameter Conditions ID=250uA, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125°C VDS=5V, ID=30A Min 60 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Volt...