AON7210
30V N-Channel MOSFET
General Description
Product Summary
The AON7210 uses trench MOSFET technology that is un...
AON7210
30V N-Channel
MOSFET
General Description
Product Summary
The AON7210 uses trench
MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
100% UIS Tested 100% Rg Tested
30V 50A
< 4mΩ
< 5.8mΩ
DFN 3.3x3.3
Top View
Bottom View
Top View
18
27 36
4 5G
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 50 39
250 30 24 45 101 83 33 6.2 4 -55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 16 45 1.1
Max 20 55 1.5
Rev 0: November 2010
www.aosmd.com
D
S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
Page 1 of 6
AON7210
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Cond...