AON6404

AON6404 30V N-Channel MOSFET General Description The AON6404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 2.2mΩ (VGS = 10V) RDS(ON) < 3.8mΩ (VGS = 4.5V) ESD protected 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G PIN1 S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Continuous Drain Current A Avalanche Current Single avalanche energy L=0.1mH TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C TA=25° C TA=70° C IDSM IAS EAS PD PDSM TJ, TSTG TC=25° C TC=100° C ID IDM VGS Maximum 30 ±20 85 67 160 25 20 85 361 83 33 2.1 1.3 -55 to 150 Units V V A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 45 1.1 Max 20 60 1.5 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AON6404 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±16V VDS=VGS ID=250µA VGS=1...