AON4407L

AON4407L www.datasheet4u.com P-Channel Enhancement Mode Field Effect Transistor General Description The AON4407L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. -RoHS Compliant -Halogen Free Features VDS (V) = -12V ID = -9 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 25mΩ (VGS = -2.5V) RDS(ON) < 31mΩ (VGS = -1.8V) ESD Protected! DFN 3x2 Top View Pin 1 Bottom View D D D G D D D S G Rg D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -12 ±8 -9 -7 -60 2.5 1.6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead Symbol A AD t ≤ 10s Steady State Steady State RθJA RθJL Typ 42 74 25 Max 50 90 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4407L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-12V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-9A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-8.5A VGS=-1.8V, ID=-7.5A VGS=-1.5V, ID=-7A gFS VSD IS Forward Tr...