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AOL1400 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1400 uses adv...
www.DataSheet4U.com
AOL1400 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1400 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and good body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard product AOL1400 is Pb-free (meets ROHS & Sony 259 specifications). AOL1400L is a Green Product ordering option. AOL1400 and AOL1400L are electrically identical.
Features
VDS (V) = 30V ID = 85A (V GS = 10V) RDS(ON) < 4.5mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V)
Ultra SO-8TM Top View
Fits SOIC8 footprint ! Bottom tab connected to drain
D
D
G S
S
G
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage VGS Gate-Source
Voltage Continuous Drain Current B TC=25°C G TC=100°C B ID IDM IDSM IAR
C
Maximum 30 ±12 85 70 200 17 13 30 145 100 50 2.1 1.3 -55 to 175
Units V V
Pulsed Drain Current Continuous Drain TA=25°C Current G TA=70°C Avalanche Current C Repetitive avalanche energy L=0.3mH Power Dissipation Power Dissipation
B
A
A mJ W W °C
EAR PD PDSM TJ, TSTG
TC=25°C TC=100°C TA=25°C TA=70°C
A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C
Symbol
A A
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 21 48 1
Max 25 60 1.5
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AOL1400
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