AOD4286/AOI4286
100V N-Channel MOSFET
General Description
Product Summary
The AOD4286, AOI4286 uses trench MOSFET tec...
AOD4286/AOI4286
100V N-Channel
MOSFET
General Description
Product Summary
The AOD4286, AOI4286 uses trench
MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100% UIS Tested
100V 14A < 68mΩ < 92mΩ
TopView
TO252 DPAK
Bottom View
Top View
TO-251A IPAK
Bottom View
D
DD
DS G AOD4286
DG S
S D G AOI4286
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 100 ±20 14 10 25 4 3 4 0.8 30 15 2.5 1.6
-55 to 175
G D S
G
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 15 41 4
Max 20 50 5
S
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Rev.1. 0: October 2013
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