AOI4146

AOD4146/AOI4146 30V N-Channel MOSFET SDMOS TM General Description The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 55A < 5.6mΩ < 9.5mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK TopView Bottom View Top View TO-251A IPAK Bottom View D D G S G D S D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.05mH C TC=25° C Power Dissipation B C Maximum 30 ±20 55 43 190 15 12 50 63 62 31 2.5 1.6 -55 to 175 Units V V A VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C C TC=100° TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 2 Max 20 50 2.4 Units ° C/W ° C/W ° C/W Rev 1: June 2009 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AOD4146/AOI4146 Electrical Characteristics (TJ=25° C...