AOD452A

AOD452A TM www.datasheet4u.com N-Channel SDMOS POWER Transistor General Description The AOD452A/L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. AOD452A and AOD452AL are electrically identical. -RoHS Compliant -AOD452AL is Halogen Free TO-252 D-PAK Features VDS (V) = 25V ID = 55A RDS(ON) < 8mΩ RDS(ON) <14mΩ (V GS = 10V) (V GS = 10V) (V GS = 4.5V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D S G S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 55 43 120 120 35 31 50 25 2.5 1.6 -55 to 175 Units V V TC=25°C TC=100°C ID IDM ISM IAR EAR PD PDSM TJ, TSTG TC=25°C A Pulsed Forward Diode CurrentC Repetitive avalanche energy L=50µH Power Dissipation B Power Dissipation A mJ W W °C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B Maximum Junction-to-TAB B Symbol A A t ≤ 10s Steady-State Steady-State Steady-State RθJA RθJC RθJC-TAB Typ 14.2 39 2.5 2.7 Max 20 50 3 3.2 Units °C/W °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.co...