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AOD452 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD452 uses advan...
www.DataSheet4U.com
AOD452 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications). AOD452L is a Green Product ordering option. AOD452 and AOD452L are electrically identical.
TO-252 D-PAK
Features
VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.5V)
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage VGS Gate-Source
Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current
C C C
Maximum 25 ±20 55 55 100 30 135 50 25 3 2.1 -55 to 175
Units V V A A mJ W W °C
TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C
Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC
Typ 14.2 39 2.5
Max 20 50 3
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L
Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V...