isc N-Channel MOSFET Transistor
AOD4102
FEATURES ·Drain Current –ID= 19A@ TC=25℃ ·Drain Source Voltage-
: VDSS=30V(Min...
isc N-Channel
MOSFET Transistor
AOD4102
FEATURES ·Drain Current –ID= 19A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=30V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =37mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
30
V
VGS
Gate-Source
Voltage-Continuous
±20
V
ID
Drain Current-Continuous
19
A
IDM
Drain Current-Single Pluse
30
A
PD
Total Dissipation @TC=25℃
21
W
TJ
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
7.0
℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
AOD4102
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold
Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate
Voltage Drain Current
VSD
Forward On-
Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID=12A VGS= 10V; ID=12A@TJ=125℃
VGS= ±20V;VDS= 0
VDS=30V; VGS= 0 VDS=30V; VGS= 0@TJ=55℃
IS= 1A; VGS= 0
MIN MAX UNIT
30
V
1.0
3.0
V
37 55
mΩ
±10
uA
1 5
μA
1
V
NOTICE: ISC reserves the ...