www.DataSheet4U.com
Rev3: Nov 2004
AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transisto...
www.DataSheet4U.com
Rev3: Nov 2004
AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AOD410L( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 30V ID = 8A RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V)
TO-252 D-PAK
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage VGS Gate-Source
Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current
C C B
Maximum 30 ±20 8 6 20 8 10 25 12.5 2.1 1.33 -55 to 175
Units V V A A mJ W W °C
TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C
Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 20 46 5.3
Max 30 60 7
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AOD410, AOD410L
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown
Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate
Voltage Drain Current Gate-Body leakage c...