AOD402

www.DataSheet4U.com AOD402 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD402 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, laod switching and general purpose applications. Standard Product AOD402 is Pb-free (meets ROHS & Sony 259 specifications). AOD402L is a Green Product ordering option. AOD402 and AOD402L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = 30V ID = 18 A (VGS = 20V) RDS(ON) < 15 mΩ (VGS = 20V) RDS(ON) < 18 mΩ (VGS = 10V) RDS(ON) < 44 mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C Maximum 30 ±25 18 12 40 18 40 60 30 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH C Power Dissipation Power Dissipation B TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16.7 40 1.9 Max 25 50 2.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD402 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=...