AOB416
100V N-Channel MOSFET SDMOS TM
General Description
Product Summary
The AOB416 is fabricated with SDMOSTM trenc...
AOB416
100V N-Channel
MOSFET SDMOS TM
General Description
Product Summary
The AOB416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V)
100% UIS Tested 100% Rg Tested
100V 45A
< 36mΩ
< 43mΩ
Top View
TO-263 D2PAK
D
Bottom View
D
S G
G S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
...
