AO8800
General Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
The AO8800 uses advanc...
AO8800
General Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
The AO8800 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
VDS (V) = 30V ID = 6.4A RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V)
TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2
G1 S1
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source
Voltage 30 VGS Gate-Source
Voltage ±12 Continuous Drain TA=25°C 6.4 A Current TA=70°C ID 5.4 Pulsed Drain Current B TA=25°C A Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C IDM PD TJ, TSTG 30 1.5 1.08 -55 to 150
Units V V A
W °C
Symbol
A A
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 64 89 53
Max 83 120 70
Units °C/W °C/W °C/W
1/6
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AO8800
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown
Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate
Voltage Drain Current Gate-Body leakage curren...