AO4828

AO4828 60V Dual N-Channel MOSFET General Description The AO4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 60V ID = 4.5A (VGS = 10V) RDS(ON) < 56mΩ (VGS = 10V) RDS(ON) < 77mΩ (VGS = 4.5V) 100% UIS tested 100% Rg tested Top View SOIC-8 Bottom View Pin1 Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 D 1 G2 S1 D 2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation TA=70°C Avalanche Current B Repetitive avalanche energy 0.1mH B PD IAR, IAS EAR, EAS Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 4.5 3.6 20 2 1.28 19 18 -55 to 150 Units V V A W A mJ °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 35 Max 62.5 110 60 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4828 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=60V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS ISM Gate-Body leakage current Gate Threshold Voltage On state dra...