AO4812
30V Dual N-Channel MOSFET
General Description
Product Summary
The AO4812 uses advanced trench technology to pr...
AO4812
30V Dual N-Channel
MOSFET
General Description
Product Summary
The AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V)
100% UIS Tested 100% Rg Tested
30V 6A < 30mΩ < 42mΩ
Top View
SOIC-8 Bottom View
Top View
S2 G2 S1 G1
D2 D2 D1 D1
G1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM IAS, IAR EAS, EAR
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 6 5 30 10 5 2 1.3
-55 to 150
D1
G2 S1
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A ...
