AO4724

AO4724 30V N-Channel MOSFET SRFET TM General Description SRFET TM The AO4724 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary VDS (V) = 30V ID = 10.5A (VGS = 10V) RDS(ON) < 17.5mΩ (VGS = 10V) RDS(ON) < 29 mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B 10.5 7.7 ID 8.5 6.2 IDM 80 TA=25°C Power Dissipation TA=70°C Avalanche Current B Repetitive avalanche energy 0.3mH B PD IAR EAR 3.1 1.7 2.0 1.1 13 25 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A W A mJ °C Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4724 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Volta...