AO4722
30V N-Channel MOSFET
SRFET TM
General Description
SRFET TM The AO4722 uses advanced trench technology with a mon...
AO4722
30V N-Channel
MOSFET
SRFET TM
General Description
SRFET TM The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Product Summary
VDS (V) = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 22mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Top View
D D D D
SOIC-8 Bottom View
D
SRFETTM Soft Recovery
MOSFET: Integrated Schottky Diode
G
S S S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
IDSM IDM IAR EAR
11.6 9.3
100 17 43
8.5 6.8
Power Dissipation
TA=25°C TA=70°C
3.1 1.7 PDSM 2.0 1.1
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Units V
A
mJ W °C
Thermal Characteristics Parameter
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
t ≤ 10s Steady-State
RθJA
Steady-State
RθJL
Typ 32 60
17
Max 40 75
24
Units °C/W °C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4722
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown
Voltage
IDSS Zero Gate
Voltage Drai...