AO4714

AO4714 30V N-Channel MOSFET SRFET TM General Description SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.7mΩ (VGS = 10V) RDS(ON) < 6.7mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current F TA=70°C Pulsed Drain Current B VGS IDSM IDM TA=25°C Power Dissipation F TA=70°C Avalanche Current B Repetitive avalanche energy L=0.3mH B PDSM IAR EAR Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State Symbol RθJA Maximum Junction-to-Lead C Steady-State RθJL Maximum 30 ±20 20 16 100 3.0 2.0 30 135 -55 to 150 Typ 31 59 16 Max 41 75 24 Units V V A A W A mJ °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4714 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=1mA, VGS=0V VDS=30V, ...