AO4709

AO4709 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4709 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of nonsynchronous DC-DC converters. Standard Product AO4709 is Pb-free (meets ROHS & Sony 259 specifications). AO4709L is a Green Product ordering option. AO4709 and AO4709L are electrically identical. Features VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V) SCHOTTKY VDS (V) = 30V,IF = 3A, VF<0.5V@1A A S S G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K G D K SOIC-8 S A www.DataSheet4U.com Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current B A MOSFET -30 ±20 -8 -6.6 -40 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A C B TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 3 2 -55 to 150 Typ 24 54 21 36 67 25 30 4.4 3.2 30 3 2 -55 to 150 Max 40 75 30 40 7...