P-Channel Enhancement Mode Field Effect Transistor
Description
July 2001
AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO4701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.
Features
VDS (V) = -30V ID = -5A RDS(ON) < 49mΩ (VGS = 10V)...
