AO4625

AO4625 Complementary Enhancement Mode Field Effect Transistor General Description The AO4625 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.Standard Product AO4625 is Pbfree (meets ROHS & Sony 259 specifications). AO4625L is a Green Product ordering option. AO4625 and AO4625L are electrically identical. Features n-channel p-channel VDS (V) = 30V -30V ID = 6.9A (VGS=10V) -5.4A (VGS = -10V) RDS(ON) RDS(ON) < 28mΩ (VGS=10V) < 45mΩ (VGS = -10V) < 42mΩ (VGS=4.5V) < 75mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 www.DataSheet4U.com D1 G1 S2 S1 SOIC-8 n-channel p-channel Max p-channel -30 ±20 -5.4 -4.6 -20 2 1.44 -55 to 150 W °C A Units V V Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG 6.9 5.8 30 2 1.44 -55 to 150 Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48...