AO4615 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4615 uses advanced trench techno...
AO4615 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4615 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary
MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-free (meets ROHS & Sony 259 specifications). AO4615L is a Green Product ordering option. AO4615 and AO4615L are electrically identical
Features
n-channel p-channel VDS (V) = 30V -30V -5.7A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 39m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 62m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) P-channel
MOSFET has an additional ROC < 1MΩ for open circuit protection.
D2 S2 G2 S1 G1
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D1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G2
G1 ROC S2 S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source
Voltage 30 V Gate-Source
Voltage ±20 GS Continuous Drain A Current Pulsed Drain Current Power Dissipation Avalanche Current B
B
Max p-channel -30 ±20 -5.7 -4.9 -30 2 1.44 20 20 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C
B
7.2 ID IDM PD IAR EAR TJ, TSTG 6.1 30 2 1.44 15 11 -55 to 150
W A mJ °C
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum J...