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AO4612 Datasheet

Part Number AO4612
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description MOSFET
Datasheet AO4612 DatasheetAO4612 Datasheet (PDF)

AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56mW (VGS=10V) < 77mW (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 105mW (VGS = -10V) < 135mW (VGS = -4.5V) 100% Rg tested SOIC-8 Top View Bottom Vie.

  AO4612   AO4612






Part Number AO4619
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description MOSFET
Datasheet AO4612 DatasheetAO4619 Datasheet (PDF)

AO4619 Complementary Enhancement Mode Field Effect Transistor General Description The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Product Summary N-Channel VDS (V) = 30V ID = 7.4A (VGS=10V) RDS(ON) < 24mΩ (VGS=10V) < 36mΩ (VGS=4.5V) P-Channel -30V -5.2A (VGS = -10V) RDS(ON) < 46mΩ (VGS = -10V) < 72mΩ (VGS = -4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% .

  AO4612   AO4612







Part Number AO4618-HF
Manufacturers Kexin
Logo Kexin
Description Complementary Trench MOSFET
Datasheet AO4612 DatasheetAO4618-HF Datasheet (PDF)

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  AO4612   AO4612







Part Number AO4618
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 40V Complementary MOSFET
Datasheet AO4612 DatasheetAO4618 Datasheet (PDF)

AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 40V ID= 8A (VGS=10V) RDS(ON) < 19mΩ (VGS=10V) < 27mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested P-Channel -40V -7A (VGS=-10V) RDS(ON) < 23mΩ (VGS=-10V) < 30mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested Top Vi.

  AO4612   AO4612







Part Number AO4618
Manufacturers Kexin
Logo Kexin
Description Complementary Trench MOSFET
Datasheet AO4612 DatasheetAO4618 Datasheet (PDF)

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  AO4612   AO4612







Part Number AO4617
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description MOSFET
Datasheet AO4612 DatasheetAO4617 Datasheet (PDF)

www.DataSheet4U.com AO4617 Complementary Enhancement Mode Field Effect Transistor General Description The AO4617 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4617 is Pb-free (meets ROHS & Sony 259 specifications). AO4617L is a Green Product ordering option. AO4617 and AO4617L are electrically identical. Features n-channel VDS (V) = 40V ID = 6A (VGS.

  AO4612   AO4612







MOSFET

AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56mW (VGS=10V) < 77mW (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 105mW (VGS = -10V) < 135mW (VGS = -4.5V) 100% Rg tested SOIC-8 Top View Bottom View D2 D1 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Symbol RqJA Maximum Junction-to-Lead C Steady-State RqJL Max n-channel 60 ±20 4.5 3.6 20 2 1.28 -55 to 150 Max p-channel -60 ±20 -3.2 -2.6 -20 2 1.28 -55 to 150 Typ Max 48 62.5 74 90 35 40 Units V V A W °C Units °C/W °C/W °C/W Rev 4.0: August. 2019 www.aosmd.com Page 1 of 9 AO4612 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero.


2007-06-07 : AS10H536    AS29372    AS29F010    AS29F040    AS29F200    AS3521B    AS58C1001    AS8E32K32    AS8F128K32    AS8F512K32   


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