AO4484

AO4484 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4484/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide www.DataSheet4U.com range of power conversion applications. AO4484 and AO4484L are electrically identical. -RoHS Compliant -AO4484L is Halogen Free Features VDS (V) = 40V ID = 10A RDS(ON) < 10mΩ RDS(ON) < 12mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) D S S S G D D D D S G SOIC-8 Absolute Maximum Ratings TJ=25°C unless otherwise noted Symbol 10 Sec Steady State Parameter VDS Drain-Source Voltage 40 VGS ±20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH Power Dissipation A G B Units V V TA=25°C TA=70°C ID IDM IAR EAR PD TJ, TSTG TA=25°C TA=70°C 13.5 10.8 120 23 79 3.1 2.0 -55 to 150 10 8 A mJ 1.7 1.1 W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady State Steady State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4484 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID = 250µA, VGS = 0V VDS = 40V, VGS = 0V TJ = 55°C VDS = 0V, VGS = ±20V VDS = VGS ID = 250µA VGS = 10V, VDS = 5V VGS = 10V, ID = 10A Static Drain-Source On-Re...