AO4472 N-Channel Enhancement Mode Field Effect Transistor
General Description The AO4472 uses advanced trench technology...
AO4472 N-Channel Enhancement Mode Field Effect Transistor
General Description The AO4472 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode www.DataSheet4U.com characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard Product AO4472 is Pbfree (meets ROHS & Sony 259 specifications). AO4472L is a Green Product ordering option. AO4472 and AO4472L are electrically identical.
Features
VDS (V) = 30V ID = 19A (VGS = 10V) RDS(ON) < 5.2mΩ (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 4.5V)
D S S S G D D D D
SOIC-8
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source
Voltage VGS Gate-Source
Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 30 ±20 19 16 80 3 2.1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4472
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown
Voltage IDSS IGSS VGS(th) ID(ON)
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Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, ...
