AO4456 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4456 uses advanced trench technology...
AO4456 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is www.DataSheet4U.com suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4456 is Pb-free (meets ROHS & Sony 259 specifications). AO4456 is a Green Product ordering option. AO4456 and AO4456 are electrically identical.
Features
VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 5.6mΩ (VGS = 4.5V)
D S S S G D D D D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source
Voltage VGS Gate-Source
Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25°C TA=70°C IDSM IDM PDSM TJ, TSTG
Maximum 30 ±12 20 16 120 3.1 2.0 -55 to 150
Units V V A
W °C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4456
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown
Voltage IDSS IGSS VGS(th) ID(ON)
www.DataSheet4U.com
Conditions ID=1mA, VGS=0V VDS=24V, V GS=0V TJ=125°C VDS=0V, VGS= ±12V...