AO4449
30V P-Channel MOSFET
General Description
Product Summary
The AO4449 uses advanced trench technology to provide...
AO4449
30V P-Channel
MOSFET
General Description
Product Summary
The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V)
100% UIS Tested 100% Rg Tested
-30V -7A < 34mΩ < 54mΩ
SOIC-8 D
Top View
Bottom View
D D
D D
G
S S S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source
Voltage
VDS
-30
Gate-Source
Voltage
VGS
±20
Continuous Drain Current
TA=25°C TA=70°C
ID
-7 -5.5
Pulsed Drain Current C
IDM
-40
Avalanche Current C
IAS, IAR
23
Avalanche energy L=0.1mH C
EAS, EAR
26
TA=25°C Power Dissipation B TA=70°C
PD
3.1 2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State
RθJA
31 59
Maximum Junction-to-Lead
Steady-State
RθJL
16
Max 40 75 24
Units V V
A
A mJ W °C
Units °C/W °C/W °C/W
Rev 3: Nov 2011
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AO4449
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown
Voltage
ID=-250µA, VGS=0V
-30
V
IDSS
Zero Gate
Voltage Drain Current
VDS=-30V, VGS=0V
TJ=55°C
-1 µA
-5
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