AO4449

AO4449 30V P-Channel MOSFET General Description Product Summary The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -7A < 34mΩ < 54mΩ SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C ID -7 -5.5 Pulsed Drain Current C IDM -40 Avalanche Current C IAS, IAR 23 Avalanche energy L=0.1mH C EAS, EAR 26 TA=25°C Power Dissipation B TA=70°C PD 3.1 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 3: Nov 2011 www.aosmd.com Page 1 of 6 AO4449 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 µA -5 The AO444G9autes-eBsoaddyvlaenackeadgetrecnucrrhentetchnology to pVroDv...