DatasheetsPDF.com

AO4447 Datasheet

Part Number AO4447
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description P-Channel MOSFET
Datasheet AO4447 DatasheetAO4447 Datasheet (PDF)

AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4V) ESD Rating: 4KV HBM The AO4447 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4447 is Pb-free (meets ROHS & Sony 259 specifications). AO4447L is.

  AO4447   AO4447






Part Number AO4449
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description P-Channel MOSFET
Datasheet AO4447 DatasheetAO4449 Datasheet (PDF)

AO4449 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4.5V) The AO4449 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications). SOIC-8 Top View S S S G D D D D D G S Ab.

  AO4447   AO4447







Part Number AO4448
Manufacturers Kexin
Logo Kexin
Description N-Channel MOSFET
Datasheet AO4447 DatasheetAO4448 Datasheet (PDF)

SMD Type N-Channel MOSFET AO4448 (KO4448) ■ Features ● VDS (V) = 80V ● ID = 10 A (VGS = 10V) ● RDS(ON) < 16mΩ (VGS = 10V) ● RDS(ON) < 20mΩ (VGS = 7V) SOP-8 +0.040.21 -0.02 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambi.

  AO4447   AO4447







Part Number AO4448
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 80V N-Channel MOSFET
Datasheet AO4447 DatasheetAO4448 Datasheet (PDF)

AO4448 80V N-Channel MOSFET SDMOS TM General Description The AO4448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 80V 10A < 16mΩ < 20mΩ Top View D D .

  AO4447   AO4447







Part Number AO4447A-HF
Manufacturers Kexin
Logo Kexin
Description P-Channel MOSFET
Datasheet AO4447 DatasheetAO4447A-HF Datasheet (PDF)

SMD Type P-Channel MOSFET AO4447A-HF (KO4447A-HF) MOSFET ■ Features ● VDS (V) =-30V ● ID =-17 A (VGS =-10V) ● RDS(ON) < 7mΩ (VGS =-10V) ● RDS(ON) < 8mΩ (VGS =-4.5V) ● RDS(ON) < 9mΩ (VGS =-4V) ● ESD Rating: 2000V HBM ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish D +0.040.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain Rg G S ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Paramete.

  AO4447   AO4447







Part Number AO4447A
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V P-Channel MOSFET
Datasheet AO4447 DatasheetAO4447A Datasheet (PDF)

AO4447A 30V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • ESD Protected • RoHS and Halogen-Free Compliant Applications Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested -30V -18.5A < 5.8mΩ < 8.2mΩ HBM Class 3B • System/Load Switch • Battery Switch • USB-PD Load Switch Top View D D D D SOIC-8 Bottom View G S S S Orderable Part Number AO4447A Package Type SO-8 Top View 18 27 36 4.

  AO4447   AO4447







P-Channel MOSFET

AO4447 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4V) ESD Rating: 4KV HBM The AO4447 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4447 is Pb-free (meets ROHS & Sony 259 specifications). AO4447L is a Green Product ordering option. AO4447 and AO4447L are electrically identical. SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -15 -13.6 -60 3.1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 26 50 14 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4447 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250 μA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250 μA VGS=-10V, VDS=-5V VGS=-10V, I D=-15A Static Drain-Source On-Resistance VGS=-4V, ID=-13A gF.


2008-12-01 : 24E64    Socket462    SocketA    TEA-2025    RT256128A-1    ZXTN19060CG    ZXTN25012EZ    STD8010    STD85N3LH5    STP85N3LH5   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)